1 edition 1.4 august 2004 FLM1011-6F x, ku-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 31.2 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 26.0 and -2.8 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 2800 4200 -0.5 -1.5 -3.0 36.5 37.5 - 6.5 7.5 - v ds = 5v, i ds = 120ma v ds = 5v, i ds = 1800ma v ds = 5v, v gs = 0v i gs = -120 a v ds = 10v, i ds = 0.6 i dss (typ.), f = 10.7 ~ 11.7 ghz, z s = z l = 50 ? ma v - 2350 - ms -5 - - v db dbm g m v p v gso p 1db g 1db drain current - 1800 2100 ma i dsr power-added efficiency -28- % add gain flatness -- 0.6 db ? g thermal resistance channel to case - 4.0 4.5 c/w case style: ia r th 3rd order intermodulation distortion f = 11.7ghz, ? f = 10mhz 2-tone test pout = 25dbm s.c.l. -42 -45 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) g.c.p.: gain compression point, s.c.l.: single carrier level description the FLM1011-6F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 37.5dbm (typ.) ?high gain: g 1db = 7.5db (typ.) ?high pae: add = 28% (typ.) ?low im 3 = -45dbc@po = 25dbm ?broad band: 10.7 ~ 11.7ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed
2 FLM1011-6F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( c) 40 30 20 10 total power dissipation (w) output power & im 3 vs. input power v ds =10v f1 = 11.7 ghz f2 = 11.71 ghz 2-tone test 15 19 17 21 23 25 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -20 -30 -40 -50 28 26 24 30 32 22 im 3 (dbc) im 3 p out output power vs. frequency pin=32dbm p 1db 28dbm 26dbm 24dbm 22dbm 20dbm 10.8 11.4 11.2 11.0 11.6 frequency (ghz) 31 33 35 37 29 27 output power (dbm) output power vs. input power 26 28 30 32 34 36 38 20 22 24 26 28 30 32 20 10 30 40 input power (dbm) output power (dbm) add p out add (%) v ds =10v f = 11.2 ghz v ds =10v p 1db
3 FLM1011-6F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.2 0.1 12345 250 50 ? 11.7 11.7 11.7 11.9 11.9 11.9 10.7 10.7 10.7 10.5 ghz 10.9 10.9 10.9 11.1 11.1 11.1 11.3 11.3 11.7 11.9 10 10.7 10.9 11.1 11.5 11.5 11.5 11.5 11.3 11.3 10.5 ghz 10.5 ghz 10.5 ghz s-parameters v ds = 10v, i ds = 1800ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 10500 .655 149.3 2.654 175.1 .037 160.5 .230 168.6 10600 .639 139.8 2.766 167.0 .039 151.3 .245 151.6 10700 .621 130.3 2.896 157.7 .049 135.2 .264 136.9 10800 .601 120.5 2.899 146.9 .050 127.2 .270 123.0 10900 .580 109.7 2.855 137.6 .060 113.5 .293 111.3 11000 .555 98.4 2.760 128.8 .066 104.6 .284 96.4 11100 .523 85.9 2.685 121.5 .078 93.9 .290 83.8 11200 .488 72.6 2.683 114.7 .086 83.3 .281 67.2 11300 .443 58.8 2.693 107.1 .091 74.1 .282 49.6 11400 .397 42.8 2.736 99.3 .097 62.7 .286 29.7 11500 .350 27.2 2.740 90.6 .099 53.0 .302 11.4 11600 .311 9.3 2.785 82.0 .103 41.7 .315 -5.8 11700 .282 -9.1 2.780 70.9 .103 35.4 .348 -22.4 11800 .259 -30.2 2.663 58.7 .108 25.6 .372 -36.8 11900 .252 -51.0 2.469 49.1 .107 18.6 .396 -48.2
eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a. 4 FLM1011-6F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4
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